tlr.440. vishay semiconductors 1 (10) www.vishay.com document number 83044 rev. a3, 29apr02 resistor led for 12 v supply voltage color type technology angle of half intensity high efficiency red tlrh4400 gaasp on gap 30 soft orange tlro4400 gaasp on gap 30 yellow tlry4400 gaasp on gap 30 green tlrg4400 gap on gap 30 pure green tlrp4400 gap on gap 30 description these devices are developed for the automotive industry and other industries which use 12 v sources.the tlr.440. series contains an integrated resistor for current limiting in series with the led chip. this allows the lamp to be driven from a 12 v source without an external current limiter. available colors are red, soft orange, yellow, green and pure green. the luminous intensity of such an led is measured at constant voltage of 12 v. these tinted diffused lamps provide a wide off-axis viewing angle. these leds are intended for space critical applications such as automobile instrument panels, switches and others which are driven from a 12 v source. features with current limiting resistor for 12 v cost effective: save space and resistor cost standard 3 mm (t-1) package wide viewing angle choice of five bright colors luminous intensity categorized yellow and green color categorized luminous intensity and color are measured at 12 v 94 8488 v s out 16496 applications status light in cars and other applications with a 12 v source off / on indicator in cars and other applications with a 12 v source background illumination for switches off / on indicator in switches
tlr.440. vishay semiconductors www.vishay.com 2 (10) rev. a3, 29apr02 document number 83044 absolute maximum ratings t amb = 25 c, unless otherwise specified tlrh4400, tlro4400, tlry4400, tlrg4400, tlrp4400 parameter test conditions symbol value unit reverse voltage v r 6 v forward voltage t amb 65 c v f 16 v power dissipation t amb 65 c p v 240 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 150 k/w optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red (tlrh4400) parameter test conditions type symbol min. typ. max. unit luminous intensity v f = 12 v i v 1.6 4 mcd dominant wavelength v f = 12 v l d 612 625 nm peak wavelength v f = 12 v l p 635 nm angle of half intensity v f = 12 v j 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 m a v br 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf soft orange (tlro4400) parameter test conditions type symbol min. typ. max. unit luminous intensity v f = 12 v i v 4 10 mcd dominant wavelength v f = 12 v l d 598 611 nm peak wavelength v f = 12 v l p 605 nm angle of half intensity v f = 12 v j 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 m a v br 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf yellow (tlry4400) parameter test conditions type symbol min. typ. max. unit luminous intensity v f = 12 v i v 1.6 4 mcd dominant wavelength v f = 12 v l d 581 594 nm
tlr.440. vishay semiconductors 3 (10) www.vishay.com document number 83044 rev. a3, 29apr02 unit max. typ. min. symbol type test conditions parameter peak wavelength v f = 12 v l p 585 nm angle of half intensity v f = 12 v j 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 m a v br 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf green (tlrg4400) parameter test conditions type symbol min. typ. max. unit luminous intensity v f = 12 v i v 1.6 4 mcd dominant wavelength v f = 12 v l d 562 575 nm peak wavelength v f = 12 v l p 565 nm angle of half intensity v f = 12 v j 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 m a v br 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf pure green (tlrp4400) parameter test conditions type symbol min. typ. max. unit luminous intensity v f = 12 v tlrp4400 i v 0.63 3 mcd luminous intensity v f = 12 v tlrp4401 i v 1.6 4 mcd luminous intensity v f = 12 v tlrp4406 i v 1.6 5 mcd dominant wavelength v f = 12 v l d 555 565 nm peak wavelength v f = 12 v l p 555 nm angle of half intensity v f = 12 v j 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 m a v br 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
tlr.440. vishay semiconductors www.vishay.com 4 (10) rev. a3, 29apr02 document number 83044 typical characteristics (t amb = 25 c, unless otherwise specified) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f forward voltage ( v ) 95 11434 f i forward current ( ma ) high efficiency red figure 1. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11435 v s = 12 v i relative forward current frel high efficiency red figure 2. relative forward current vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11436 i f = 10 ma v relative forward voltage frel high efficiency red figure 3. relative forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810121416 v f forward voltage ( v ) 95 11456 i relative luminous intensity vrel high efficiency red figure 4. relative luminous intensity vs. forward voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 11437 i relative luminous intensity vrel v s = 12 v high efficiency red figure 5. rel. luminous intensity vs. ambient temperature 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 6. relative luminous intensity vs. wavelength
tlr.440. vishay semiconductors 5 (10) www.vishay.com document number 83044 rev. a3, 29apr02 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f forward voltage ( v ) 95 10834 f i forward current ( ma ) soft orange figure 7. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 10835 i relative forward current frel soft orange v s = 12 v figure 8. relative forward current vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 10836 i f = 10 ma v relative forward voltage frel soft orange figure 9. relative forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810121416 v f forward voltage ( v ) 95 10837 i relative luminous intensity vrel soft orange figure 10. relative luminous intensity vs. forward voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 10838 i relative luminous intensity vrel v s = 12 v soft orange figure 11. rel. luminous intensity vs. ambient temperature 570 590 610 630 650 0 0.2 0.4 0.6 0.8 1.2 670 95 10324 1.0 i relative luminous intensity v rel wavelength ( nm ) soft orange figure 12. relative luminous intensity vs. wavelength
tlr.440. vishay semiconductors www.vishay.com 6 (10) rev. a3, 29apr02 document number 83044 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f forward voltage ( v ) 95 11438 f i forward current ( ma ) yellow figure 13. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11439 v s = 12 v i relative forward current frel yellow figure 14. relative forward current vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11457 i f = 10 ma v relative forward voltage frel yellow figure 15. relative forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810121416 v f forward voltage ( v ) 95 11458 i relative luminous intensity vrel yellow figure 16. relative luminous intensity vs. forward voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 11440 i relative luminous intensity vrel yellow v s = 12 v figure 17. rel. luminous intensity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i relative luminous intensity v rel wavelength ( nm ) 1.0 yellow figure 18. relative luminous intensity vs. wavelength
tlr.440. vishay semiconductors 7 (10) www.vishay.com document number 83044 rev. a3, 29apr02 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f forward voltage ( v ) 95 11441 f i forward current ( ma ) green figure 19. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11442 v s = 12 v i relative forward current frel green figure 20. relative forward current vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11443 i f = 10 ma v relative forward voltage frel green figure 21. relative forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810121416 v f forward voltage ( v ) 95 11444 i relative luminous intensity vrel green figure 22. relative luminous intensity vs. forward voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 11445 i relative luminous intensity vrel v s = 12 v green figure 23. rel. luminous intensity vs. ambient temperature 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 24. relative luminous intensity vs. wavelength
tlr.440. vishay semiconductors www.vishay.com 8 (10) rev. a3, 29apr02 document number 83044 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f forward voltage ( v ) 95 11465 f i forward current ( ma ) pure green figure 25. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11466 v s = 12 v i relative forward current frel pure green figure 26. relative forward current vs. ambient temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 95 11467 i f = 10 ma v relative forward voltage frel pure green figure 27. relative forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810121416 v f forward voltage ( v ) 95 11468 i relative luminous intensity vrel pure green figure 28. relative luminous intensity vs. forward voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 11446 i relative luminous intensity vrel pure green v s = 12 v figure 29. rel. luminous intensity vs. ambient temperature
tlr.440. vishay semiconductors 9 (10) www.vishay.com document number 83044 rev. a3, 29apr02 dimensions in mm 95 10913
tlr.440. vishay semiconductors www.vishay.com 10 (10) rev. a3, 29apr02 document number 83044 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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